InP Wafer
InP wafers are indium and phosphorus compounds. They are single crystals made using a specific LEC technique. They have a stable structure and are silver in color with the chemical formula InP.
- Applications and Fields
- InP is an important III-V compound and semiconductor material with high electron mobility, good radiation stability, and a large bandgap. InP has particular advantages in the following two applications.
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- Photonics: Emission and detection capabilities at wavelengths greater than 1000 nm;
- Radio Frequency:High speed and low noise performance in high frequency RF applications. InP is the first choice in performance-driven niche markets such as communication, radar, test equipment, and radiation measurement.
| Item | Unit | Specification | |
|---|---|---|---|
| Type | P-type/N-type | ||
| Crystal Growth Method | VGF | VGF | |
| Dopant | Fe | S, Sn, Zn, Undoped | |
| Diameter | inch | 2-4 | 2-4 |
| Surface Orientation | (100) ± 0.5° | (100) ± 0.5° | |
| Oriflame Orientation | US, EJ | US, EJ | |
| Resistivity | Ω·cm | ≥0.5 × 107 | |
| Carrier Concentration | cm-3 | N/A | (0.8-8) × 1018/(1-10) × 1015/(0.8-8) × 1018 |
| Electron Mobility (Mob) | cm2/v.s | ≥1000 | 1000-2500/3000-5000/50-100 |
| Dislocation Density (EPD) | cm2 | 1500-5000 | 100-5000/≥5000/≥500 |
| Thickness | μm | (350-675) ± 25 | (350-675) ± 25 |
| TTV (P/P) | μm | ≤10 | ≤10 |
| TTV (P/E) | μm | ≤15 | ≤15 |
| Warp | μm | ≤15 | ≤15 |
| Surface Finishing | Sides 1 & 2 | Mirror/Etching | |
| Packing Method | Coin Roll/Cassette Case | Coin Roll/Cassette Case | |