InP Wafer

InP wafers are indium and phosphorus compounds. They are single crystals made using a specific LEC technique. They have a stable structure and are silver in color with the chemical formula InP.

Applications and Fields
InP is an important III-V compound and semiconductor material with high electron mobility, good radiation stability, and a large bandgap. InP has particular advantages in the following two applications.
  1. Photonics: Emission and detection capabilities at wavelengths greater than 1000 nm;
  2. Radio Frequency: High speed and low noise performance in high frequency RF applications. InP is the first choice in performance-driven niche markets such as communication, radar, test equipment, and radiation measurement.
Item Unit Specification
Type P-type/N-type
Crystal Growth Method VGF VGF
Dopant Fe S, Sn, Zn, Undoped
Diameter inch 2-4 2-4
Surface Orientation (100) ± 0.5° (100) ± 0.5°
Oriflame Orientation US, EJ US, EJ
Resistivity Ω·cm ≥0.5 × 107
Carrier Concentration cm-3 N/A (0.8-8) × 1018/(1-10) × 1015/(0.8-8) × 1018
Electron Mobility (Mob) cm2/v.s ≥1000 1000-2500/3000-5000/50-100
Dislocation Density (EPD) cm2 1500-5000 100-5000/≥5000/≥500
Thickness μm (350-675) ± 25 (350-675) ± 25
TTV (P/P) μm ≤10 ≤10
TTV (P/E) μm ≤15 ≤15
Warp μm ≤15 ≤15
Surface Finishing Sides 1 & 2 Mirror/Etching
Packing Method Coin Roll/Cassette Case Coin Roll/Cassette Case

Extended InGaAs Epitaxial Wafers

Applications include: Gas Monitoring, Medical Imaging, Forest Fire Prevention, Spectral Analysis, and Grain Sorting.
Specification Size 2", 3", 4"
Epitaxial Materials InP, InAlAs, InGaAs
Doping Si (N Type) / Be (P Type)
Wavelength Conventional 0.9~1.7 μm Extended 1.0~2.5 μm
Structure Planar Type Layer Doping (cm3) Thickness (nm)
n-InyAl1-yAs Cap 1-5×1016 500-1000
i-InGaAs Absorber uid 1500-3000
n+-InxAl1-xAs Buffer 1-5×1018 1000-2000
InP Buffer 1-5×1018 200-1000
InP — /
Mesa Type p-InyAl1-yAs Cap 1-5×1018 500-1000
i-InGaAs Absorber uid 1500-3000
n+-InxAl1-xAs Buffer 1-5×1018 1000-2000
InP Buffer 1-5×1018 200-1000
InP — /

We can provide epitaxial wafers with customized sizes and thicknesses.
Selected parameters can be tailored to meet customer requirements.

APD Epitaxial Wafers

Applications: Optical communication 10G / 25G / 50G …
Product Specification Size 2", 3", 4"
Epitaxial Materials InP, InGaAs, InGaAsP, InAIAs
Doping Si (N Type)
Product Structure ① Layer Doping (cm3) Thickness (nm)
InP uid 2500-4000
InP 1-5×1017 200-1000
InGaAsP uid 10-500
InGaAs uid 1500-3000
InP Buffer 1-5×1018 200-1000
InP — /
Product Structure ② Layer Doping (cm3) Thickness (nm)
InP uid 500-4000
InAlAs 1-5×1017 200-1000
InAlAs uid 10-500
InGaAs uid 1500-3000
InAIAs 1-5×1018 200-1000
InP Buffer 1-5×1018 200-1000
InP — /

We can provide epitaxial wafers with customized sizes and thicknesses.
Selected parameters can be tailored to meet customer requirements.

GaSb-based Type-II Superlattice (T2SL) Epitaxial Wafers

Applications include: Gas Monitoring, Medical Imaging, Autonomous Driving, Aerospace, and Fire Detection.
Product Specification Size 2", 3"
Epitaxial Materials InAs, GaSb
Doping Si (N Type) / Be (P Type) /Te (N Type)
Product Structure ① Layer Doping (cm3) Thickness (nm)
n-InAs 1-5×1018 10-100
n-InAs/GaSb 1-5×1018 200-800
i-InAs/GaSb uid 1500-4000
p-InAs/GaSb 1-5×1018 200-800
p-GaSb buffer 1-5×1018 200-1000
GaSb — /
Product Structure ② Layer Doping (cm3) Thickness (nm)
p-GaSb 1-5×1018 500-1000
p-InAs/GaSb (LW) 1-5×1018 200-800
i-InAs/GaSb (LW) uid 1500-4000
n-GaSb 1-5×1018 200-800
i-InAs/GaSb (MW) uid 1500-4000
p-InAs/GaSb (MW) 1-5×1018 200-800
p-GaSb buffer 1-5×1018 200-1000
GaSb — /

We can provide epitaxial wafers with customized sizes and thicknesses.
Selected parameters can be tailored to meet customer requirements.