SiC Wafer

We provide single crystal SiC products.

  • 2-6 inch 4H/6H-P SiC Wafer
  • 2-6 inch 3C SiC Wafer
  • 2-12 inch 4H-Semi-insulating SiC Wafer
  • 2-12 inch 4H-N SiC Wafer
  • 4–8 inch Optical SiC Wafer
  • 4-12 inch SiC Ingot
  • 4-8 inch SiC Epitaxial Wafer

SiC wafers are expected to see further growth in demand for power device applications in the future.
Our company offers SiC wafers in sizes ranging from 2, 4, 6, 8, and 12 inches, as well as small substrates from 5mm square to 10mm square.
In addition, we provide optical-grade SiC wafers suitable for AR glasses.

SiC Wafer

※ For special thicknesses, please contact us.
Size Type Off-Angle Grade Number of Micropipes Thickness Surface Finishing
5 mm × 5 mm 4H-P 0°～4° ± 0.5° Dummy <0.1 cm-2 350 ± 25 μm Si Surface: CMP Finishing
C Surface: Optical Mirror Finishing (Mirror)
6H-P
3C-N <0001> ± 0.5°
10 mm × 10 mm 4H-P 0°～4° ± 0.5°
6H-P
3C-N <0001> ± 0.5°
2 inch 4H-N 4° ± 0.5° Dummy - 350 ± 25 μm
1000 ± 25 μm ※
4H Semi-Insulating <0001> ± 0.2° Dummy - 500 ± 25 μm (DSP)
350 ± 25 μm (SSP) ※
4H-P 0°～4° ± 0.5° Dummy <0.1 cm-2 350 ± 25 μm
6H-P
3C-N <0001> ± 0.5°
4 inch 4H-N 4° ± 0.5° Prime - 350 ± 25 μm
800 ± 25 μm ※
Dummy -
4H Semi-Insulating 0° ± 0.2° Prime - 500 ± 25 μm (DSP)
350 ± 25 μm (SSP) ※
Dummy -
4H-P 0°～4° ± 0.5° Dummy ≤10 cm-2 350 ± 25 μm
6H-P <0.1 cm-2
3C-N <0001> ± 0.5°
Optical - Prime ≤0.1 cm-2 500 ± 25 μm
- Production ≤0.1 cm-2
- Dummy ≤5 cm-2
6 inch 4H-N 4° ± 0.5° Prime ≤0.1 cm-2 350 ± 25 μm
Production ≤1 cm-2
Dummy ≤5 cm-2
4H Semi-Insulating 0° ± 0.2° Prime ≤0.5 cm-2 500 ± 25 μm
Production ≤2 cm-2
Dummy ≤5 cm-2
4H-P 0°～4° ± 0.5° Dummy ≤10 cm-2 350 ± 25 μm
6H-P <0.1 cm-2
3C-N <0001> ± 0.5°
Optical - Prime ≤0.1 cm-2 500 ± 25 μm
- Production ≤0.1 cm-2
- Dummy ≤5 cm-2
8 inch 4H-N 4° ± 0.5° Prime ≤0.1 cm-2 350 ± 25 μm
500 ± 25 μm
Production ≤0.1 cm-2
Dummy ≤5 cm-2
4H Semi-Insulating 0° ± 0.2° Prime ≤0.5 cm-2 500 ± 25 μm
Production ≤2 cm-2
Dummy ≤5 cm-2
12 inch 4H-N 4° ± 1° Dummy ≤5 cm-2 600 ± 100 µm
700 ± 100 µm

SiC Ingot

SiC Ingot

Type Off Angle Grade Number of Micropipes Thickness Surface Finishing
SiC Ingot 4 Inches 4H-N 4° ± 0.5° Dummy ≤50 cm-2
  • 10~14.9 mm (Thickness A type)
  • 15~19.9 mm (Thickness B type)
  • 20~25 mm　 (Thickness C type)
 Peripheral circular processing available
Primary and secondary orifices available
6 Inches 4H-N
8 Inches 4H-N

SiC Epitaxial Wafer

Size 6 Inch
Conductivity N-type
Dopant Nitroger
Doping Calculation Method No-NA
Concentration Range 9E14-1E19/cm3
Tolerance ±12%
Uniformity 0.06
Thickness Range 0.2–50 μm
Tolerance ±8%
Uniformity 0.04
Defect Die yield ≥95%
Scratches cumulative scratch length ≤150 mm
Edge chips ≤0.5 mm
Backside cleanliness 100% clean
Surface Roughness (20 × 20 μm) ≤0.5 nm