SiC Wafer

We provide single crystal SiC products.

  • 2-4 inch 4H/6H-P SiC Wafer
  • 2-4 inch 3C SiC Wafer
  • 4-6inch 4H-Semi-insulating SiC Wafer
  • 4-8 inch 4H-N SiC Wafer
  • 4-8 inch SiC Ingot
  • 4-8 inch SiC Epitaxial Wafer

SiC wafers are expected to see increased use in power devices in the future.
In addition to 2, 4, 6, and 8 inches, we also handle substrates from 5 mm square to 10 mm square.

SiC Wafer

Size Type Off-Angle Grade Number of Micropipes Thickness Surface Finishing
5 mm × 5 mm 4H-P 2.0° – 4.0° ± 0.5° Dummy <0.1 cm-2 350 ± 25 μm Si Surface: CMP Finishing
C Surface: Optical Mirror Finishing (Mirror)
6H-P
3C-N <0001> ± 0.5°
10 mm × 10 mm 4H-P 2.0°～4.0° ± 0.5°
6H-P
3C-N <0001> ± 0.5°
2 inch 4H-P 2.0°～4.0° ± 0.5° Dummy <0.1 cm-2 350 ± 25 μm
6H-P
3C-N <0001> ± 0.5°
4 inch 4H-N 4° ± 0.5° Prime ≤0.2 cm-2 350 ± 25 μm
Dummy ≤10 cm-2
4H-Semi-insulating 0° ± 0.2° Prime ≤0.2 cm-2 500 ± 25 μm
Dummy ≤10 cm-2
4H-P 2.0°～4.0° ± 0.5° Dummy ≤10 cm-2 350 ± 25 μm
6H-P <0.1 cm-2
3C-N <0001> ± 0.5°
6 inch 4H-N 4° ± 0.5° Prime ≤0.2 cm-2 350 ± 25 μm
Production
Dummy ≤1 cm-2
4H-Semi-insulating 0° ± 0.2° Prime 500 ± 25 μm
Production ≤5 cm-2
Dummy ≤10 cm-2
8 inch 4H-N 4° ± 0.5° Prime ≤1 cm-2
Production ≤5 cm-2
Dummy ≤5 cm-2

SiC Ingot

SiC Ingot

Type Off Angle Grade Number of Micropipes Thickness Surface Finishing
SiC Ingot 4 Inches 4H-N 4° ± 0.5° Dummy ≤50 cm-2
  • 10~14.9 mm (Thickness A type)
  • 15~19.9 mm (Thickness B type)
  • 20~25 mm　 (Thickness C type)
 Peripheral circular processing available
Primary and secondary orifices available
6 Inches 4H-N
8 Inches 4H-N

SiC Epitaxial Wafer

Size 6 Inch
Conductivity N-type
Dopant Nitroger
Doping Calculation Method No-NA
Concentration Range 9E14-1E19/cm3
Tolerance ±12%
Uniformity 0.06
Thickness Range 0.2–50 μm
Tolerance ±8%
Uniformity 0.04
Defect Die yield ≥95%
Scratches cumulative scratch length ≤150 mm
Edge chips ≤0.5 mm
Backside cleanliness 100% clean
Surface Roughness (20 × 20 μm) ≤0.5 nm