Film-coated Wafer

We call a product that has undergone a film-adding process to the wafer a 'Film-coated Wafer'. The film formation process of the wafer includes interlayer insulating materials as insulating films, metal films as conductive materials, photoresists as process materials, and also includes protective films, etc.

3–4 Inch Film-Coated Silicon Wafer

The following are the sputtering targets that our company possesses. It is possible to create film-coated wafers with any combination.

METALS Au, Al, Ag, B, C, Co, Cr, Cu, Fe, Ge, Hf, In, Ir, Mg, Mn, Mo, Nb, Ni, Pd, Pt, Rh, Ru, Si (N-type) (1–50 Ω·cm), Si (P-type) (1–50 Ω·cm), Si (N-type) (high resistance) (above 1000 Ω·cm), Si (N-type) (high resistance) (above 5000 Ω·cm), Sn, Ta, Ti, V, W, Y, Zn, Zr
SILICIDES CoSi2, MoSi2.5, NiSi2, TaSi2, TiSi2, WSi2, WSi2.5, ZrSi2, CrSi2
NITRIDES AlN、BN、Mo2N、Si3N4、ZrN
CARBIDES SiC, TiC
ALLOYS Al-Cu, Al-Nd, Al-Sc, Al-Si, Al-Si-Cu, Al-Ti, Au-Sn, Cu-Ni, Co-Cr, Fe-Co, Ni-Cr, Ni-Fe, Ni-V, TiW
OXIDES Al2O3, AZO, BaTiO3, CeO2, CuO, Fe2O3, Ga2O3, Gd2O3, HfO2, In2O3, ITO, IZO, LiCoO2, LiMn2O4, LiNbO3, Li3PO4, MgO、Mn2O3, Nb2O5, NiO, PZT, RuO2, SiO, SiO2, SnO, SnO2, SrRuO3, SrTiO3, Ta2O5, TiO2, WO3, Y2O3, ZnO, ZrO2 : Y2O3
4–6 Inch Wafers with Thermal Oxide Film
Specifications
Size 4 inches 6 inches
Diameter 100 ± 0.5 mm 150 ± 0.5 mm
Conductivity Type P-type
Resistance Value 1–100 Ω·cm
Thickness 525 ± 25 μm 625 ± 25 μm
Thermal Oxide Film Thickness 500 nm ± 10％
Quantity from 25 sheets
【Special Notes】
  • Please note that we cannot guarantee the grade or particles of the Si wafer.
  • Regarding the bevel, it is basically a full round edge, but we cannot guarantee it. The Si wafer of the delivered product will be a SEMI Standard product.
※ This is not a stock item. Delivery will take approximately 10 to 14 days after ordering.
4–6 Inch Si Wafer with 10,000Å Dual-Sided Thermal Oxide Film
Specifications
Size 4 inches 6 inches
Diameter 100 ± 0.2 mm 150 ± 0.2 mm
Thickness 525 ± 25 μm 625 ± 25 μm
Conductivity Type P-type
Surface State One-Side Mirror/One-Side Etched
Resistance Value 1–100 Ω·cm
Thermal Oxide Film Thickness 10000 Å ± 10％
Quantity from 25 sheets
【Special Notes】
  • Please note that we cannot guarantee the grade or particles of the Si wafer.
  • Regarding the bevel, it is basically a full round edge, but we cannot guarantee it. The Si wafer of the delivered product will be a SEMI Standard product.
※ This is not a stock item. Delivery will take approximately 10 to 14 days after ordering.
6-Inch Si Wafer with 20,000Å Dual-Sided Thermal Oxide Film
Specifications
Size 4 inches
Diameter 150 ± 0.2 mm
Thickness 625 ± 25 μm
Conductivity Type P-type
Surface State One-Side Mirror/One-Side Etched
Resistance Value 1–100 Ω·cm
Thermal Oxide Film Thickness 20000 Å ± 10％
Quantity from 25 sheets
【Special Notes】
  • Please note that we cannot guarantee the grade or particles of the Si wafer.
  • Regarding the bevel, it is basically a full round edge, but we cannot guarantee it. The Si wafer of the delivered product will be a SEMI Standard product.
※ This is not a stock item. Delivery will take approximately 10 to 14 days after ordering.
6-Inch Si Wafer with 100,000Å Dual-Sided Thermal Oxide Film
Specifications
Size 6 inches
Diameter 150 ± 0.2 mm
Thickness 625 ± 25 μm
Conductivity Type P-type
Surface State One-Side Mirror/One-Side Etched
Resistance Value 1–100 Ω·cm
Thermal Oxide Film Thickness 100000 Å ± 10％
Quantity from 25 sheets
【Special Notes】
  • Please note that we cannot guarantee the grade or particles of the Si wafer.
  • Regarding the bevel, it is basically a full round edge, but we cannot guarantee it. The Si wafer of the delivered product will be a SEMI Standard product.
※ This is not a stock item. Delivery will take approximately 8 to 9 weeks after ordering.
※ As this is a special order for a thick film product, we do not guarantee the adhesion of the film or similar issues.