GaN Wafer
We provide GaN wafer products.
- Accepts small orders
- Notable for use in power LSI, high-brightness LEDs, and lasers
- High quality (few crystal defects)
- Low price (compared to other companies)
GaN Substrate
Item |
Specification |
Diameter |
51.0 mm ± 0.3 mm |
100.2 mm±0.3 mm |
Thickness |
490 µm ± 30 µm |
540 µm ± 30 µm |
Plane Orientation |
(0001) Ga-Face c-plane |
TTV (5 mm edge exclusion) |
≤15 µm |
≤30 µm |
Warp (5 mm edge exclusion) |
≤20 µm |
≤80 µm |
Bow (5 mm edge exclusion) |
-10 µm to +5 µm |
-40 µm to +20 µm |
Electrical Characteristics |
Type |
Resistivity |
N-type (Si) |
≤0.02 Ω·cm |
UID |
≤0.2 Ω·cm |
Semi-Insulating (Carbon) |
>1E8 Ω·cm |
Grade |
Density (pits/cm2) |
2" (pits) |
4" (pits) |
Production |
≤0.5 |
≤10 |
≤40 |
Research |
≤1.5 |
≤30 |
≤120 |
Dummy |
≤2.5 |
≤50 |
≤200 |
GaN Substrate (Square)
Item |
Specification |
Size |
(10 ± 0.5) × (15 ± 0.5) mm2 Customized Size |
Thickness |
400 ± 25 µm |
Plane Orientation |
C-plane (0001) off-angle toward M-axis 0.35 ± 0.15° or 0.55 ± 0.15° |
TTV |
≤10 µm |
BOW |
≤10 μm |
Type |
UID |
N-type (Si) |
Semi-Insulating (Carbon) |
Ga face surface roughness |
<0.3 nm (10 × 10 μm) |
N face surface roughness |
Etched (0.5–1.5 µm); Polished (<0.3 nm) |
Dislocation Density |
<1 × 106 cm-2 |
(002) FWHM |
≤70 arcsec |
(102) FWHM |
≤70 arcsec |
Macro defect density(hole) |
<0.3 cm-2 |
Effective Area |
>90% |
GaN Template (φ2 inch)
Item |
Specification |
Diameter |
φ50.8 mm ± 0.1 mm |
GaN Film Thickness |
4 µm, 10–25 µm |
Oriented Plane |
C-plane (0001) ± 0.5° |
Type |
UID |
N-type (Si) |
Orifura Orientation. Length |
Orifura orientation (1-100). Orifura length 30 mm ± 1 mm |
Electrical Resistivity (300 K) |
<0.5 Ω·cm |
<0.05 Ω·cm |
Dislocation Density |
5 × 108 cm2 |
Substrate Structure |
GaN/Sapphire Wafer (0001) Surface |
Effective Area |
More than 90% |
Surface Finish |
Ga side: CMP finish. N side: Fine grinding (Option: Optical mirror finish) |
GaN Template (φ4 Inches)
Item |
Specification |
Diameter |
φ100 mm ± 0.1 mm |
GaN Film Thickness |
4 µm, 10–25 µm |
Oriented Plane |
C-plane (0001) ± 0.5° |
Conductivity Type |
N-type (Undoped) |
Orifura Orientation. Length |
Orifura orientation (1–100). Orifura length 30 mm ± 1 mm |
Electrical Resistivity (300 K) |
<0.5 Ω·cm |
Transfer Defect Density |
Below 5 × 108 pcs/cm2 |
Substrate Structure |
GaN/Sapphire Wafer (0001) Surface |
Effective Area |
More than 90% |
Surface Finish |
Ga side: CMP finish. N side: Fine grinding (Option: Optical mirror finish) |
2-inch GaN-on-Sapphire Blue/Green LED Wafer
Substrate |
Type |
Flat Sapphire |
Polish |
Single Side Polished (SSP)/Double Side Polished (DSP) |
Dimension |
50.8 ± 0.2 mm |
Orientation |
C-plane (0001) off angle toward M-axis 0.2 ± 0.1° |
Thickness |
430 ± 25 mm |
Epilayer |
Structure |
0.2 μm pGaN / 0.5 μm MQWs / 2.5 μm nGaN / 2.0 μm uGaN |
Thickness |
5.5 ± 0.5 μm |
Roughness(Ra) |
<0.5 nm |
Dislocation density |
<5 × 108 cm2 |
Wavelength |
Blue LED |
Green LED |
465 ± 10 nm |
465 ± 10 nm |
Wavelength FWHMs |
<25 nm |
<40 nm |
Chip Performance |
Cut-in Voltage @ 1μA |
2.3–2.5 V |
2.2–2.4 V |
Useable Area |
>90% (Excluding edge and macro defects) |
Package |
Packaged in a cleanroom in a single wafer container |
4-inch GaN-on-Sapphire Blue/Green/Red LED Wafer
Substrate |
Type |
Flat Sapphire |
Polish |
Single Side Polished (SSP)/Double Side Polished (DSP) |
Dimension |
100 ± 0.2 mm |
Orientation |
C-plane (0001) off angle toward M-axis 0.2 ± 0.1° |
Thickness |
650 ± 25 μm |
Epilayer |
Structure |
0.2 μm pGaN / 0.5 μm MQWs / 2.5 μm nGaN / 2.0 μm uGaN |
Thickness |
5.5 ± 0.5 μm |
Roughness(Ra) |
<0.5 nm |
Dislocation density |
<5 × 108 cm2 |
Wavelength |
Blue LED |
Green LED |
Red LED |
465 ± 10 nm |
525 ± 10 nm |
630 ± 10 nm |
Wavelength FWHMs |
<25 nm |
<40 nm |
|
Chip Performance |
Cut-in voltage@1μA |
2.3–2.5 V |
2.2–2.4 V |
|
Useable Area |
>90% (edge and macro defects exclusion) |
Package |
Packaged in a cleanroom in a single wafer container |
6-inch GaN-on-Sapphire Blue/Green/Red LED Wafer
Substrate |
Type |
Flat Sapphire |
Polish |
Single Side Polished (SSP)/Double Side Polished (DSP) |
Dimension |
150 ± 0.2 mm |
Orientation |
C-plane (0001) off angle toward M-axis 0.2 ± 0.1° |
Thickness |
1300 ± 25 μm |
Epilayer |
Structure |
0.2 μm pGaN / 0.5 μm MQWs / 2.5 μm nGaN / 2.0 μm uGaN |
Thickness |
6.9 ± 0.5 μm |
Roughness (Ra) |
<0.5 nm |
Dislocation density |
<5 × 108 cm2 |
Wavelength |
Blue LED |
Green LED |
Red LED |
475 ± 3 nm |
521 ± 5 nm |
630 ± 8 nm |
Wavelength FWHMs |
<25 nm |
<40 nm |
|
Chip Performance |
Cut-in voltage @ 1 μA |
2.3–2.5 V |
2.2–2.4 V |
|
Useable Area |
>90% (edge and macro defects exclusion) |
Package |
Packaged in a cleanroom in a single wafer container |