Composite Wafer

N-type SiC Composite Wafer
Semi-insulating SiC Composite Wafer
N-type SiC on Si Composite Wafer
Semi-insulating SiC on Si Composite Wafer
Si on SiC Composite Wafer
Si on AlN Composite Wafer
SOI Wafer

N-type SiC Composite Wafer

Item Specification Item Specification
Diameter 150 ± 0.2 mm Front (Si-face) roughness Ra ≤ 0.2 nm (5 μm × 5 μm)
Type 4H Edge Chip, Scratch, Crack (visual inspection) None
Resistivity 0.015–0.025 Ω·cm TTV ≤3 μm
Transfer layer Thickness ≥0.4 μm Warp ≤35 μm
Void ≤5 ea/wafer (2 mm > D > 0.5 mm) Thickness 350 μm ± 25 μm

Semi-insulating SiC Composite Wafer

Item Specification Item Specification
Diameter 150 ± 0.2 mm Front (Si-face) roughness Ra ≤ 0.2 nm (5 μm × 5 μm)
Type 4H Edge Chip, Scratch, Crack (visual inspection) None
Resistivity 0.015–0.025 Ω·cm TTV ≤3 μm
Transfer layer Thickness ≥0.4 μm Warp ≤35 μm
Void ≤5 ea/wafer (2 mm > D > 0.5 mm) Thickness 500 ± 25 μm

N-type SiC on Si Composite Wafer

Item Specification Item Specification
Diameter 150 ± 0.2 mm Si Orientation <111>/<100>/<110>
SiC Type 4H Si Type P/N
SiC Resistivity 0.015–0.025 Ω·cm Flat length 47.5 ± 1.5 mm
Transfer SiC layer Thickness ≥0.1 μm Edge Chip, Scratch, Crack (visual inspection) None
Void ≤5 ea/wafer (2 mm < D < 0.5 mm) TTV ≤5 μm
Front roughness Ra ≤ 0.2 nm (5 μm × 5 μm) Thickness 500/625/675 ± 25 μm

Semi-insulating SiC on Si Composite Wafer

Item Specification Item Specification
Diameter 150 ± 0.2 mm Si Orientation <111>/<100>/<110>
SiC Polytype 4H Si Type P/N
SiC Resistivity ≥1E8 Ω·cm Flat/Notch Flat/Notch
Transfer SiC layer Thickness ≥0.1 μm Edge Chip, Scratch, Crack (visual inspection) None
Void ≤5 ea/wafer (2 mm > D > 0.5 mm) TTV ≤5 μm
Front roughness Ra ≤ 0.2 nm (5 μm × 5 μm) Thickness 500/625/675 ± 25 μm

Si on SiC Composite Wafer

Item Specification Item Specification
Diameter 150 ± 0.2 mm SiC Type 4H
Si Orientation <111>/<100>/<110> SiC Resistivity 0.015–0.025/≥1E8 Ω·cm
Si Type P/N Flat/Notch Flat/Notch
Transfer Si layer Thickness ≥0.1 μm Edge Chip, Scratch, Crack (visual inspection) None
Void ≤5 ea / wafer (2 mm > D > 0.5 mm) TTV ≤5 μm
Front roughness Ra ≤ 0.2 nm (5 μm × 5 μm) Thickness 350/500 ± 25 μm

Si on AlN Composite Wafer

Item Specification Item Specification
Diameter 150 ± 0.2 mm AlN Resistivity ≥1E8 Ω·cm
Si Orientation <111>/<100>/<110> AlN Thermal conductivity ≥180 W/m·K
Si Type P/N Flat length 47.5 ± 1.5 mm
Transfer Si layer Thickness ≥0.1 μm TTV ≤5 μm
Edge Chip, Scratch, Crack (visual inspection) None Thickness 625 ± 25 μm
Front roughness Ra ≤ 0.2 nm (5 μm × 5 μm)

SOI Wafer

Size inch 4 5 6 8 12
Active Layer Unit Specification
Manufacturing Method - CZ/FZ
Type / Conductivity - P/N/Non-doped
Crystal Orientation - <100>/<111>/<110>
Dopant - B, P, As, Sb
Thickness μm ≧1.0
*Resistivity Ω·cm 0.001–10000
*Embedded Oxide Film μm 0.05–10
Support Substrate Specification
Manufacturing Method - CZ/FZ
Type / Conductivity - P/N/Non-doped
Crystal Orientation - <100>/<111>/<110>
Dopant - B, P, As, Sb
*Thickness μm JEITA・SEMI Standard/200-1500
*Resistivity Ω·cm 0.001–10000
Remarks *Please inquire separately for detailed specifications.