Composite Wafer
N-type SiC Composite Wafer
Item |
Specification |
Item |
Specification |
Diameter |
150 ± 0.2 mm |
Front (Si-face) roughness |
Ra ≤ 0.2 nm (5 μm × 5 μm) |
Type |
4H |
Edge Chip, Scratch, Crack (visual inspection) |
None |
Resistivity |
0.015–0.025 Ω·cm |
TTV |
≤3 μm |
Transfer layer Thickness |
≥0.4 μm |
Warp |
≤35 μm |
Void |
≤5 ea/wafer (2 mm > D > 0.5 mm) |
Thickness |
350 μm ± 25 μm |
Semi-insulating SiC Composite Wafer
Item |
Specification |
Item |
Specification |
Diameter |
150 ± 0.2 mm |
Front (Si-face) roughness |
Ra ≤ 0.2 nm (5 μm × 5 μm) |
Type |
4H |
Edge Chip, Scratch, Crack (visual inspection) |
None |
Resistivity |
0.015–0.025 Ω·cm |
TTV |
≤3 μm |
Transfer layer Thickness |
≥0.4 μm |
Warp |
≤35 μm |
Void |
≤5 ea/wafer (2 mm > D > 0.5 mm) |
Thickness |
500 ± 25 μm |
N-type SiC on Si Composite Wafer
Item |
Specification |
Item |
Specification |
Diameter |
150 ± 0.2 mm |
Si Orientation |
<111>/<100>/<110> |
SiC Type |
4H |
Si Type |
P/N |
SiC Resistivity |
0.015–0.025 Ω·cm |
Flat length |
47.5 ± 1.5 mm |
Transfer SiC layer Thickness |
≥0.1 μm |
Edge Chip, Scratch, Crack (visual inspection) |
None |
Void |
≤5 ea/wafer (2 mm < D < 0.5 mm) |
TTV |
≤5 μm |
Front roughness |
Ra ≤ 0.2 nm (5 μm × 5 μm) |
Thickness |
500/625/675 ± 25 μm |
Semi-insulating SiC on Si Composite Wafer
Item |
Specification |
Item |
Specification |
Diameter |
150 ± 0.2 mm |
Si Orientation |
<111>/<100>/<110> |
SiC Polytype |
4H |
Si Type |
P/N |
SiC Resistivity |
≥1E8 Ω·cm |
Flat/Notch |
Flat/Notch |
Transfer SiC layer Thickness |
≥0.1 μm |
Edge Chip, Scratch, Crack (visual inspection) |
None |
Void |
≤5 ea/wafer (2 mm > D > 0.5 mm) |
TTV |
≤5 μm |
Front roughness |
Ra ≤ 0.2 nm (5 μm × 5 μm) |
Thickness |
500/625/675 ± 25 μm |
Si on SiC Composite Wafer
Item |
Specification |
Item |
Specification |
Diameter |
150 ± 0.2 mm |
SiC Type |
4H |
Si Orientation |
<111>/<100>/<110> |
SiC Resistivity |
0.015–0.025/≥1E8 Ω·cm |
Si Type |
P/N |
Flat/Notch |
Flat/Notch |
Transfer Si layer Thickness |
≥0.1 μm |
Edge Chip, Scratch, Crack (visual inspection) |
None |
Void |
≤5 ea / wafer (2 mm > D > 0.5 mm) |
TTV |
≤5 μm |
Front roughness |
Ra ≤ 0.2 nm (5 μm × 5 μm) |
Thickness |
350/500 ± 25 μm |
Si on AlN Composite Wafer
Item |
Specification |
Item |
Specification |
Diameter |
150 ± 0.2 mm |
AlN Resistivity |
≥1E8 Ω·cm |
Si Orientation |
<111>/<100>/<110> |
AlN Thermal conductivity |
≥180 W/m·K |
Si Type |
P/N |
Flat length |
47.5 ± 1.5 mm |
Transfer Si layer Thickness |
≥0.1 μm |
TTV |
≤5 μm |
Edge Chip, Scratch, Crack (visual inspection) |
None |
Thickness |
625 ± 25 μm |
Front roughness |
Ra ≤ 0.2 nm (5 μm × 5 μm) |
|
|
SOI Wafer
Size |
inch |
4 |
5 |
6 |
8 |
12 |
Active Layer |
Unit |
Specification |
Manufacturing Method |
- |
CZ/FZ |
Type / Conductivity |
- |
P/N/Non-doped |
Crystal Orientation |
- |
<100>/<111>/<110> |
Dopant |
- |
B, P, As, Sb |
Thickness |
μm |
≧1.0 |
*Resistivity |
Ω·cm |
0.001–10000 |
*Embedded Oxide Film |
μm |
0.05–10 |
Support Substrate |
|
Specification |
Manufacturing Method |
- |
CZ/FZ |
Type / Conductivity |
- |
P/N/Non-doped |
Crystal Orientation |
- |
<100>/<111>/<110> |
Dopant |
- |
B, P, As, Sb |
*Thickness |
μm |
JEITA・SEMI Standard/200-1500 |
*Resistivity |
Ω·cm |
0.001–10000 |
Remarks |
|
*Please inquire separately for detailed specifications. |