Ga₂O₃ Wafer
We Provide Ga₂O₃ Products.
- 10 × 10 Ga₂O₃ Square Substrate
- 1-inch Ga₂O₃ Wafer
- 2-inch Ga₂O₃ Wafer
- 4-inch Ga₂O₃ Wafer
- Ga₂O₃ Seed Crystal
Gallium oxide is widely used as a power electronics device, leveraging its high voltage resistance and low on-resistance characteristics. It is used in various applications such as electric vehicles, solar power inverters, high-speed rail power transmission, and has potential possibilities in other fields as well.
The bandgap of gallium oxide reaches 4.85eV, and it has excellent transmittance in the visible light wave range. This makes it applicable in fields such as solar-blind ultraviolet exploration and radiation exploration.
The low mismatch characteristics of gallium oxide single crystals and GaN are utilized in the growth of GaN, which is expected to be used in the production of high-performance high-frequency devices for 5G communication applications.
10 × 10 Ga₂O₃ Square Substrate
| 10 × 10 Ga₂O₃ Square Substrate | |||
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| Item | Specification | ||
| Crystal Orientation | (100) | ||
| Dopant | UID | Sn | Mg/Fe |
| Resistivity | 1016-1017 cm-3 | >1018 cm-3 | ≥1010 Ω·cm |
| FWHM (arcsec) | ≤150 | ||
| Dislocation Density | <1 × 105 cm-2 | ||
| Size | A-B | C-D | Thickness |
| 10 mm | 10.5 mm | 0.5(±0.02) mm | |
| Reference | Long side: [010] | ||
| Surface | Single-sided mirror/Double-sided mirror Ra < 0.5 nm Crystal surface deviation < ±1° |
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1-inch & 2-inch Ga₂O₃ Wafer
| 1-inch & 2-inch Ga₂O₃ Wafer | |||
|---|---|---|---|
| Item | Specification | ||
| Crystal Orientation | (100) | ||
| Dopant | UID | Sn | Mg/Fe |
| Nd-Na/Resistivity | 1016-1017 cm-3 | >1018 cm-3 | ≥1010 Ω·cm |
| FWHM (arcsec) | ≤150 | ||
| Dislocation Density | <1 × 105 cm-2 | ||
| Size | Diameter | Thickness | |
| 25.4/50.8 ± 0.5 mm | 0.65 ± 0.02 mm | ||
| Reference | [010] | ||
| Surface | Single-sided mirror/Double-sided mirror Ra < 0.5 nm Crystal surface deviation < ±1° |
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4-inch Ga₂O₃ Wafer
| 4-inch Ga₂O₃ Wafer | |||||||
|---|---|---|---|---|---|---|---|
| Item | Specification | ||||||
| Crystal Orientation | (100) | ||||||
| Doping | UID | Sn | Mg | ||||
| Nd-Na/Resistivity | 1016-1017 cm-3 | >1018 cm-3 | ≥1010 Ω・cm | ||||
| FWHM (arcsec) | ≤150 | ||||||
| Dislocation Density | <1 × 105 cm-2 | ||||||
| Size | Diameter | Thickness | |||||
| 100.0 ± 0.5 mm | 0.65 ± 0.02 mm | ||||||
| Reference | [010] | ||||||
| Surface | Single-sided mirror/Double-sided mirror Ra < 0.5 nm Crystal surface deviation < ±1° |
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Ga₂O₃ Seed Crystal
| Ga₂O₃ Seed Crystal | |||
|---|---|---|---|
| Item | Specification | ||
| Crystal Orientation | Long-side Direction (100) | ||
| Doping | UID/Fe/Mg | ||
| FWHM (arcsec) | ≤150 | ||
| Dislocation Density | ≤2 × 104 cm-2 | ||
| Size | A-B | C-D | Length |
| 4-7 mm | 4-7 mm | 30-100 mm | |
| Surface | Cutting Surface Crystal surface deviation < ±1° |
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