GaAs Wafer
Gallium Arsenide, or GaAs, is a compound semiconductor widely used in semiconductor devices due to its properties. In the semiconductor field, it is often referred to as "Garihisu".
- Applications and Fields
- GaAs (Gallium Arsenide) is a semiconductor material with excellent performance, characterized by a direct band gap, high electron mobility, low high-frequency noise, and high conversion efficiency.
- RF devices manufactured using GaAs wafers are widely used in the field of wireless communication, including wireless LAN (WLAN), mobile phone communication, 4G/5G base stations, satellite communication, Wi-Fi communication, etc.
- With the development of Mini LEDs and Micro LEDs, red LEDs manufactured with GaAs wafers are expected to find increasingly more applications in the field of display screens and AR/VR.
| Project | Unit | LD Application Product Specification | LED Application Product Specification | Microelectronics Product Specification |
|---|---|---|---|---|
| Conductivity Type | N-type | P-type/N-type | ||
| Crystal Growth Method | VGF | VGF | VGF | |
| Dopant | Si | Zn/Si | Undoped | |
| Diameter | inch | 2-6 | 2-6 | 2-6 |
| Surface Orientation | (100) ± 0.1° | (100) ± 0.5° | (100) ± 0.5° | |
| Off Orientation | US or EJ | US or EJ | US, EJ or notch | |
| Carrier Concentration | cm-3 | (0.4-2.5) × 1018 | (0.5-5) × 1019 (0.4-4) × 1018 |
|
| Resistivity | Ω·cm | (1.2-9.9) × 10-3 | (1.2-9.9) × 10-3 | >107 |
| Electron Mobility (Mob) | cm2/v.s | >1500 | 50-120/>1000 | >4000 |
| Dislocation Density (EPD) | cm2 | <500 | <5000 | <5000 |
| Thickness | μm | (350-650) ± 25 | (350-650) ± 25 | (350-650) ± 25 |
| TTV (P/P) | μm | ≤5 | ≤5 | ≤4 |
| TTV (P/E) | μm | ≤10 | ≤10 | ≤10 |
| Warp | μm | ≤10 | ≤10 | ≤10 |
| Surface Finishing | Surface Backside |
Mirror Mirror/Etching |
Mirror Mirror/Etching |
Mirror Mirror/Etching |
| Packing Method | Coin Roll/Cassette Case | Coin Roll/Cassette Case | Coin Roll/Cassette Case |