LiNbO3 (Lithium Niobate)
Lithium Niobate (LiNbO3) is a multifunctional artificial monocrystalline material widely used in the fields of optics, electronics, and acoustics. Due to its distinctive nonlinear optical properties, piezoelectric properties, electro-optical properties, and strong dielectric properties, it is highly regarded as a base material for next-generation optical communication technologies and high-performance devices.
We provide Lithium Niobate (LiNbO3) monocrystalline products.
2 to 4 inches
3mm×3mm～20mm×20mm
Others
Optical Grade LiNbO3 Substrate/Wafer
| Material | Optical Grade LiNbO3 Wafers (White or Black) | |
|---|---|---|
| Curie Temp | 1142 ± 2.0℃ | |
| Cutting Angle | X/Y/Z etc | |
| Diameter/Size | 2”/3”/4” | |
| Tol (±) | <0.20 mm | |
| Thickness | 0.18 ~ 0.5mm or more | |
| Primary Flat | 16 mm / 22 mm / 32 mm | |
| TTV | <3 µm | |
| Bow | -30 < bow < 30 | |
| Warp | <40 µm | |
| Orientation Flat | All Available | |
| Surface Type | Single Side Polished /Double Sides Polished | |
| Polished Side Ra | <0.5 nm | |
| S/D | 20 / 10 | |
| Edge Criteria | R = 0.2mm or Bullnose | |
| Optical Doped | Fe / Zn / MgO etc for optical grade LN < wafers | |
| Wafer Surface Criteria | Refractive Index | No=2.2878/Ne=2.2033 @632nm wavelength |
| Contamination | None | |
| Particles >0.3 µm | <= 30 | |
| Scratch, Chipping | None | |
| Defect | No edge cracks, scratches, saw marks, stains | |
| Packaging | Qty/Wafer box | 25pcs per box |
SAW grade LiNbO3 substrate/Wafer
| Material | LiNbO3 wafers (White or Black) | |
|---|---|---|
| Curie Temp | 1142 ± 2.0℃ | |
| Cutting Angle | X/Y/Z/Y36/Y41/Y64/Y128/etc | |
| Diameter/Size | 3”/4”/6"LN wafer & 8"under R/D | |
| Tol (±) | <0.20 mm | |
| Thickness | 0.18 ~ 0.5mm or more | |
| Primary Flat | 22 mm / 32 mm / 42.5 mm /57.5 mm | |
| LTV (5 mm × 5 mm) | <1 µm | |
| TTV | <3 µm | |
| Bow | -30 < bow < 30 | |
| PLTV (<0.5 µm) | ≥95% (5 mm × 5 mm) | |
| Orientation Flat | All Available | |
| Surface Type | Single Side Polished /Double Sides Polished | |
| Polished Side Ra | <0.5 nm | |
| Back Side Criteria | General is 0.2-0.5 µm or as customized | |
| Edge Criteria | R = 0.2 mm or Bullnose | |
| Wafer Surface Criteria | Transmissivity | general: 5.9 × 10-11 < s < 2.0 × 10-10 at 25℃ |
| Contamination | None | |
| Particles >0.3 µm | <= 30 | |
| Scratch, Chipping | None | |
| Defect | No edge cracks, scratches, saw marks, stains | |
| Packaging | Qty/Wafer box | 25pcs per box |