SiC Epitaxial
4H-SiC Epitaxial is applied to power devices in various fields. Such as SBD, MOSFET, JEFT, BJT, IGBT, etc.
It is applied in fields such as home appliances, communication equipment, motor control, solar power generation, wind power generation, hybrid and electric vehicles, railways, ships, and aerospace.
N-type 4H-SiC Epiwafer
| Size | 6 Inch | |
| Conductivity | N-type | |
| Dopant | Nitroger | |
| Doping Calculation Method | No-NA | |
| Concentration | Range | 9E14-1E19/cm³ |
| Tolerance | ±12% | |
| Uniformity | 0.06 | |
| Thickness | Range | 0.2 ~ 50μm |
| Tolerance | ±8% | |
| Uniformity | 0.04 | |
| Defect | Die yield | ≥ 95% |
| Scratches | cumulative scratch length ≤ 150mm | |
| Edge chips | ≤ 0.5mm | |
| Backside cleanliness | 100% clean | |
| Surface Roughness(20×20μm) | ≤ 0.5nm | |