Ti:Sapphire Laser Crystal
- Titanium Doped Sapphire Crystal (Ti:Sapphire)
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Ti:Sapphire (Titanium:Sapphire) laser crystals are indispensable in a variety of laser applications such as ultra-short pulse lasers, femtosecond lasers, and high power lasers, due to their wide tuning range of 660-1050 nm and outstanding optical characteristics. These advanced laser technology compatible crystals are suitable for a wide range of uses in research institutions and industries.
- Ti:Sapphire crystals grown by TGT have characteristics such as [0001] orientation growth, high doping amount (α490 = 4.0cm-1), high gain, and high laser damage threshold.
Applications
- As an excellent alternative to dye lasers
- For generating ultraviolet and DUV (up to 193nm) lasers with ultra-fast pulses of less than 10fs
- As a pump light source for OPO
Specifications
| Chemical Formula |
Ti3+: Al2O3 |
| Crystal Structure |
Hexagonal |
| Lattice Constants |
a=4.758 Å, c=12.991 Å |
| Density |
3.98 g/cm3 |
| Melting Point |
2040℃ |
| Mohs Hardness |
9 |
| Thermal Conductivity |
52 W/m/k |
| Specific Heat |
0.42 J/g/k |
| Laser Action |
4 - Level Vibronic |
| Fluorescence Lifetime |
3.2 µs (T=300 K) |
| Tuning Range |
660～1050 nm |
| Absorbtion Range |
400～600 nm |
| Emission Peak |
795 nm |
| Absorption Peak |
488 nm |
| Refractive Index |
1.76 @ 800 nm |
| Peak Cross-section |
3 - 4 × 10-19 cm2 |
| Thermal Expansion |
8.40 × 10-6/℃ |
Standard Product Specifications
- Orientation: Optical axis C normal to rod axis
- Ti2O3 concentration: 0.06 - 0.26atm %
- Figure Of Merit(FOM): 100~250(>250 available on special requests)
- α490: 1.0-4.0cm-1
- Diameter: 2-30mm or specified
- Path Length: 2-30mm or specified
- End configurations: Flat/Flat or Brewster/Brewster ends
- Flatness: <λ/10 @ 633 nm
- Parallelism: <10 arc sec
- Surface finishing: <40/20scratch/dig to MIL-PRF-13830B
- Wavefront distortion: <λ/4 per inch
