LaAlO3 Lanthanum Aluminate
LaAlO3 single crystal substrates are widely used as substrates for the epitaxial growth of high-temperature superconducting thin films and colossal magnetoresistance (CMR) thin films.
Features
- Low dielectric loss
- Excellent lattice matching
- Low thermal expansion coefficient
- High chemical stability
- Good thermal stability
Applications
- Epitaxial substrate for high-temperature superconducting thin films
- Epitaxial substrate for colossal magnetoresistance (CMR) thin films
- Applications in microwave amplification and dielectric resonators
Physical Specifications
| Item |
Specification |
| Chemical Formula |
LaAlO3 |
| Crystal Growth Method |
CZ |
| Crystal Structure |
Hexagonal |
| Lattice Constant |
a = 5.357 Å、c = 13.22 Å |
| Mohs Hardness |
6.5 |
| Density |
6.52 g/cm3 |
| Melting Point |
2080 ℃ |
| Dielectric Constant (ε) |
ε=21 |
| Dielectric Loss (tanδ) |
～3×10-4@300K,～0.6×10-4@77K |
| Thermal Expansion Coefficient |
10×10-6/K |
Substrate Specifications
| Item |
Specification |
| Size |
Φ76.2 mm |
| Thickness |
0.5 mm or customizable |
| Surface Finish |
Single-side polished / Double-side polished |
| Crystal Orientation |
＜100＞、＜110＞、＜111＞ ±0.2° |
| Surface Roughness |
Ra ≤ 1 nm |
| Notch Accuracy |
2° (custom specifications available for ≤1°) |
