Spinel MgAl2O4

MgAl2O4 single crystal is an oxide single crystal material with a spinel structure, offering excellent heat resistance and chemical stability.
It is widely used in advanced materials research fields, including as a substrate for the epitaxial growth of wide bandgap semiconductors such as Ga2O3 and GaN.

Features: High crystal stability / Heat and chemical resistance / Excellent processability
Applications: Ga2O3 and GaN epitaxial substrates, oxide semiconductor research, optical material applications

Characteristics

Composition MgAl2O4 (MgO:Al2O3=1:1)
Crystal system Cubic
Crystal structure Spinel
Lattice constant a=0.8083 nm
Melting point 2130 ℃
Density 3.64 g/cm3(20 ℃)

Standard Specs

※If you are looking for other specs, please contact us.
Size
(Outer size tolerance: ±0.1 mm / Thickness tolerance: ±0.05 mm)
10×10×0.5 t
15×15×0.5 t
Orientation
(Tolerance: ±0.5°)
(100), (111)
Polishing One-side / Both-side
Surface roughness Ra≦1.0 nm
Rmax≦5.0 nm